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Preliminary Technical Information
PolarHT TM Power
MOSFET
(Electrically Isolated Tab)
IXTC 62N15P
IXTR 62N15P
V DSS
I D25
R DS(on)
= 150 V
= 36 A
≤ 45 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
ISOPLUS220 (IXTC)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
150
150
V
V
E153432
V GS
V GSM
I D25
I DM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 20
± 30
36
150
V
V
A
A
G
D
S
Isolated back surface
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
50
30
1.0
10
A
mJ
J
V/ns
ISOPLUS247 (IXTR)
E153432
P D
T J ≤ 150 ° C, R G = 10 ?
T C = 25 ° C
150
W
G
D
S
Isolated back surface
T J
T JM
T stg
-55 ... +175
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
International standard isolated
T L
F C
1.6 mm (0.062 in.) from case for 10 s
Mounting force ISOPLUS220
ISOPLUS247
300
11..65 / 2.5..15
20..120 / 4.5..25
° C
N/lb
N/lb
Features
l
packages
Weight
ISOPLUS220
ISOPLUS247
3
5
g
g
l
l
UL recognized packages
Silicon chip on Direct-Copper-Bond
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
BV DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
150
3.0
5.0
± 100
V
V
nA
l
l
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Easy to mount
Space savings
High power density
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 31 A, Note 1
T J = 125 ° C
10
200
45
μ A
μ A
m ?
Advantages
l
l
l
DS99622E(05/06)
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